BD8166EFV-E2 查看數據表（PDF） - ROHM Semiconductor
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BD8166EFV-E2 Datasheet PDF : 21 Pages
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BD8166EFV
●Reference Data (Unless otherwise specified, Ta = 25℃)
100
1.6
10
1
0.1
0.001
0.01
0.1
SCP CAPACITOR [μF]
Fig.13 SCP Capacity
vs Delay Time
1.6
1.2
0.8
0.4
0
0
5
10
15
20
25
INPUT VOLTAGE : V+,V- [V]
Fig.14 COM Input Bias Current
1.2
0.8
0.4
0
0
5
10
15
20
25
VCOM VOLTAGE : VCOM[V]
Fig.16 VCOM Offset Voltage
35V
15V
3.3V
-6V
Fig.17 Start-up Sequence
100
90
80
70
60
50
40
30
20
10
0
100
1000
OUTPUT CURRENT[mA]
10000
Fig.19 Output Current vs
Efficiency (Vo1)
400
320
240
160
80
0
0
200 400 600 800 1000
ISW[mA]
Fig.22 DC/DC SW On Resistance
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100
90
80
70
60
50
40
30
20
10
0
100
1000
OUTPUT CURRENT[mA]
10000
Fig.20 Output Current vs
Efficiency (VDD)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
Cx CURRENT [mA]
Fig.23 Charge Pump N-channel
On Resistance
5/17
Technical Note
20
15
25℃
85℃
10
5
-40℃
0
-300 -200 -100 0
100 200 300
OUTPUT CURRENT : ICOM[mA]
Fig.15 COM Load Regulation
IG
Vo2GS
Fig.18 Gate-shading Waveform
100
80
60
40
20
0
8
10
12
14
16
18
SUPPLY VOLTAGE[V]
Fig.21 Total Efficiency
180
150
120
90
60
30
0
0
20
40
60
80 100
Cx CURRENT [mA]
Fig.24 Charge Pump
P-channel On Resistance
2015.12 - Rev.C
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