DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGA2001 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BGA2001
Philips
Philips Electronics Philips
BGA2001 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Silicon MMIC amplifier
Product specification
BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VS
supply voltage
IS
supply current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
RF input AC coupled
forced by DC voltage on RF input
Ts 100 °C
MIN.
65
MAX.
4.5
30
135
+150
150
UNIT
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
IS
supply current
MSG
maximum stable gain
|s21|2
insertion power gain
PL
load power
NF
noise figure
IP3(in)
input intercept point; note 1
VVS-OUT = 1 V
VVS-OUT = 2.5 V
3
VVS-OUT = 4.5 V
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
at 1 dB gain compression point;
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz;
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz;
ΓS = Γopt
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz;
ΓS = Γopt
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz
VVS-OUT = 2.5 V;
IVS-OUT = 4.5 mA;
f = 1800 MHz
TYP.
0.7
4.5
11
22
19.5
18
14
2
1.3
1.3
7.4
4.5
MAX.
6
UNIT
mA
mA
mA
dB
dB
dB
dB
dBm
dB
dB
dBm
dBm
Note
1. See application note: RNR-T45-99-B-0513.
1999 Aug 11
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]