BPW76(1999) 查看數據表（PDF） - Vishay Semiconductors
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BPW76 Datasheet PDF : 6 Pages
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Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications with
external optics.
A base terminal is available to enable biasing and sen-
sitivity control.
Features
D Hermetically sealed case
D Flat window
D Very wide viewing angle ϕ = ± 40°
D Exact central chip alignment
D Long range light barrier with an additional optics
D Base terminal available
D High photo sensitivity
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
x tp/T = 0.5, tp 10 ms
x Tamb 25 °C
xt 5 s
BPW76
Vishay Telefunken
94 8401
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
RthJC
Value
80
70
5
50
100
250
125
–55...+125
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
Document Number 81526
Rev. 2, 20-May-99
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