BPW76A 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
BPW76A Datasheet PDF : 5 Pages
| |||
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
800
600
RthJC
400
200
RthJA
0
0 25 50 75 100 125 150
94 8342
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
TEST CONDITION
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Range of spectral bandwidth
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
V(BR)CEO
ICEO
CCEO
ϕ
λp
λ0.1
VCEsat
ton
toff
fc
MIN.
70
TYP.
1
6
± 40
850
450 to
1080
0.15
6
5
110
MAX.
100
0.3
UNIT
V
nA
pF
deg
nm
nm
V
µs
µs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector light current
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
PART
BPW76A
BPW76B
SYMBOL
Ica
Ica
MIN.
0.4
0.6
TYP.
MAX.
0.8
UNIT
mA
mA
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
106
105
104
103
102
VCE = 20 V
101
E=0
100
20
94 8343
50
100
150
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.50
2.25
2.00
1.75
VCE = 5V
E e = 1 mW/cm2
λ = 950 nm
1.50
1.25
1.00
0.75
0.50
0.25
0
0 10 20 30 40 50 60 70 80 90 100
94 8344
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Document Number: 81526
Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
399
Share Link: 