BS270_D74Z 查看數據表（PDF） - Fairchild Semiconductor

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BS270_D74Z

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

BS270

N-Channel Enhancement Mode Field Effect Transistor

April 1995

General Description

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 500mA DC. These products are

particularly suited for low voltage, low current applications such

as small servo motor control, power MOSFET gate drivers,

and other switching applications.

Features

400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V.

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings

Symbol Parameter

TA = 25°C unless otherwise noted

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage (RGS < 1MΩ)

VGSS

Gate-Source Voltage - Continuous

- Non Repetitive (tp < 50µs)

ID

Drain Current - Continuous

- Pulsed

PD

Maximum Power Dissipation

Derate Above 25°C

TJ,TSTG

TL

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

THERMAL CHARACTERISTICS

RθJA

Thermal Resistacne, Junction-to-Ambient

© 1997 Fairchild Semiconductor Corporation

BS270

60

60

±20

±40

400

2000

625

5

-55 to 150

300

200

Units

V

V

V

mA

mW

mW/°C

°C

°C

°C/W

BS270.SAM

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