BS270_D74Z 查看數據表（PDF） - Fairchild Semiconductor
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BS270_D74Z Datasheet PDF : 10 Pages
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 10 µA
VDS = 60 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSF
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 500 mA
VDS(ON)
Drain-Source On-Voltage
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, VDS > 2 VDS(on)
VGS = 4.5 V, VDS > 2 VDS(on)
VDS > 2 VDS(on), ID = 200 mA
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ton
Turn-On Time
toff
Turn-Off Time
VDD = 30 V, ID = 500 m A,
VGS = 10 V, RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 400 mA (Note 1)
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Min Typ Max Units
60
TJ = 125oC
V
1
µA
500 µA
10
nA
-10
nA
1
2.1
2.5
V
TJ = 125oC
1.2
2
Ω
2
3.5
1.8
3
0.6
1
V
0.14 0.225
2000 2700
mA
400 600
100 320
mS
20
50
pF
11
25
pF
4
5
pF
10
ns
10
ns
400 mA
2000 mA
0.88 1.2
V
BS270.SAM
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