BS616LV1010EIP70(2008) 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV1010EIP70
(Rev.:2008)

Very Low Power CMOS SRAM 64K X 16 bit

Brilliance Semiconductor 

„ Revision History

Revision No. History

2.5

Add Icc1 characteristic parameter

2.6

Change I-grade operation temperature range

- from –25OC to –40OC

2.7

Typical value of standby current is replaced by

maximum value in Featues and Description

section

Remove “-: Normal” (Leaded) PKG Material in

ordering information

BS616LV1010

Draft Date

Jan. 13, 2006

May. 25, 2006

Oct. 31, 2008

Remark

R0201-BS616LV1010

11

Revision 2.7

Oct.

2008

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