BS616LV8011 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV8011 Datasheet PDF : 9 Pages
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BSI
BS616LV8011
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC, Vcc=3V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tWC
tE1LWH
tCW
tAVWL
tAS
tAVWH
tAW
tWLWH
tWHAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWP
tWR
tWHZ
tDW
tDH
tOHZ
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
(CE1,CE2,WE)
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
BS616LV8011-70
MIN. TYP. MAX.
70 -- --
70 -- --
0 -- --
70 -- --
35 -- --
0 -- --
0 -- 30
30 -- --
0 -- --
0 -- 30
tWHOX
tOW
End of Write to Output Active
5 -- --
BS616LV8011-10
MIN. TYP. MAX.
100 -- --
100 -- --
0 -- --
100 -- --
50 -- --
0 -- --
0 -- 40
40 -- --
0 -- --
0 -- 40
10 -- --
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
OE
(3)
t WR
CE2
CE1
WE
D OUT
D IN
(5)
(11)
t CW
(5)
t AS
(4,10)
t OHZ
t AW
(3)
t WP
(2)
t DW
t DH
R0201-BS616LV8011
6
Revision 2.3
April 2002
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