22N03S 查看數據表（PDF） - Infineon Technologies

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22N03S

OptiMOS®2 Power-Transistor

Infineon Technologies 

OptiMOS®2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC1 for target applications

• N-channel

• Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

Product Summary

V DS

R DS(on),max

ID

BSC022N03S

30 V

2.2 mΩ

50 A

P-TDSON-8

Type

BSC022N03S

Package

P-TDSON-8

Ordering Code Marking

Q67042-S4218 22N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

T C=25 °C

T C=100 °C

T A=25 °C,

R thJA=45 K/W2)

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

I D,pulse

E AS

dv /dt

T C=25 °C3)

I D=50 A, R GS=25 Ω

I D=50 A, V DS=24 V,

di /dt =200 A/µs,

T j,max=150 °C

Gate source voltage

V GS

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=45 K/W2)

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

Rev. 1.22

page 1

Value

50

50

28

200

800

6

±20

104

2.8

-55 ... 150

55/150/56

Unit

A

mJ

kV/µs

V

W

°C

2004-07-09

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