BSC0908NS 查看數據表（PDF） - Infineon Technologies

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BSC0908NS

n-Channel Power MOSFET

Infineon Technologies 

Table 14

13 Avalanche characteristics

OptiMOS™ Power-MOSFET

BSC0908NS

Electrical characteristics diagrams

14 Typ. gate charge

IAS=f(tAV); RGS=25   parameter: Tj(start)

Table 15

15 Drain-source breakdown voltage

VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

Final Data Sheet

8

3.1, 2010-10-18

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