BYV410-600 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

BYV410-600

Enhanced ultrafast dual rectifier diode

NXP Semiconductors. 

BYV410-600

Enhanced ultrafast dual rectifier diode

Rev. 01 — 29 June 2009

Product data sheet

1. Product profile

1.1 General description

Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits

„ High thermal cycling performance

„ Low on state losses

„ Low thermal resistance

„ Soft recovery characteristic minimizes

power consuming oscillations

1.3 Applications

„ Dual mode (DCM and CCM) PFC

„ Power Factor Correction (PFC) for

Interleaved Topology

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

VRRM

repetitive peak

reverse voltage

IO(AV)

average output

current

Dynamic characteristics

trr

reverse recovery

time

Qr

recovered charge

Static characteristics

VF

forward voltage

Conditions

square-wave pulse; δ = 0.5;

Tmb ≤ 92 °C; both diodes

conducting; see Figure 1;

see Figure 2

IF = 1 A; VR = 30 V;

dIF/dt = 100 A/µs;

Tj = 25 °C; see Figure 5

IF = 1 A; VR = 30 V;

dIF/dt = 100 A/µs

IF = 10 A; Tj = 150 °C

IF = 10 A; Tj = 25 °C;

see Figure 4

Min Typ Max Unit

-

-

600 V

-

-

20 A

-

20 35 ns

-

15 28 C

-

1.3 1.9 V

-

1.4 2.1 V

Share Link: