CHA5215AFKF/23 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5215AFKF/23 Datasheet PDF : 12 Pages
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CHA5215a
5.8GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5215a is a MMIC multifunction
integrating a 3-stage medium power
amplifier, a gain control and an output
detector. A high saturated output power
allows a linear operating point for
multichannel communication applications.
The output power can be controlled thanks
to the combination of a detected output
voltage and an important gain control
dynamic range.
The circuit is manufactured with a standard
0.7µm implanted power MESFET, air
bridges, via holes through the substrate
and electron beam gate lithography
process. It is supplied in chip form or in
ceramic flat-pack package.
Main Features
■ Wide operating frequency range
■ High saturated output power
■ High linearity
■ High gain
■ High dynamic gain control
■ Output power monitor
■ Chip dimensions : 2.47 x 1.27 x 0.10 mm
Gc Vg Vd Pc
IN
OUT
Ref
Block diagram
30
25
20
15
10
5
0
5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7
Frequency (GHz)
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
5
5.8
7
GHz
Gmax Maximum gain
25
dB
∆G
Gain control range
10
15
dB
Psat Saturated output power
27
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA52150160 -08-Jun-00
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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