CHA5215AFKF/23 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5215AFKF/23 Datasheet PDF : 12 Pages
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CHA5215a
5.8GHz Medium Power Amplifier
Electrical Characteristics
Tamb = +25°C
Symbol
Parameter
Fop Operating frequency range
Test
Min. Typ. Max
Conditions
5
5.8
7
Unit
GHz
Glin Linear gain (Gc=-5V)
25
dB
Gdr Gain control dynamic range
10 15
dB
Gc Gain control voltage
-5
0
V
Pout Saturated output power
27
dBm
Sdet Output power monitor sensitivity
-5
mV/mW
Vref Reference monitor voltage
550
mV
RLin Input return loss (full band) (2)
7
12
dB
RLout Output return loss (2)
6
dB
Vd Positive supply voltage (1)
9
V
Id Positive supply current
330 400 mA
Vg Negative supply voltage
-1.4
V
Ig Negative supply current
15
mA
(1) Depending on the application a trade-off can be obtained between linearity and power
consumption by adjusting the positive supply voltage (from 6 to 9V).
(2) The return loss can be improved by using a simple matching network (available on request).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Positive supply voltage
10
V
Vg
Negative supply voltage
-6 to 0 (3)
V
Gc
Gain control voltage
-6 to 0.6
Pin
Maximum peak input power overdrive (2)
20
dBm
Top Operating temperature range
-50 to +70
°C
Tstg Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
(3) Choose Vg in order to have Id ≤ 400mA when Vd is applied
Ref. : DSCHA52150160 -08-Jun-00
2/12
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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