CHA7010-99F/00 查看數據表（PDF） - United Monolithic Semiconductors

零件编号

产品描述 (功能)

生产厂家

CHA7010-99F/00

X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors 

X-band High Power Amplifier

CHA7010

Typical measured characteristics

Measurements in test fixture :

Tamb=25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%

20

16

12

8

4

db(S21)

0

db(S11)

-4

db(S22)

-8

-12

-16

-20

8

8,5

9

9,5

10

10,5

11

11,5

12

Frequency(GHz)

S-parameters

42

40

38

36

34

Pout @ 8,4 GHz

Pout @ 8,6 GHz

32

Pout @ 8,8 GHz

Pout @ 9 GHz

30

Pout @ 9.2 GHz

28

Pout @ 9.4 GHz

Pout @ 9.6 GHz

26

Pout @ 9.8 GHz

Pout @ 10 GHz

24

Pout @ 10.2 GHz

22

Pout @ 10.4 GHz

-1

0

1

2

3

4

5

6

7

Compression level (dB)

Output power versus compression level : F= 8.4 to 10.4GHz

Ref. DSCHA70104054 - 23 Feb 04

3/7

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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