BDS18 BDS18SMD
BDS19 BDS19SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
Parameter
Test Conditions
Collector cut-off current BDS18 VCB = –120V
(IE = 0)
BDS19 VCB = –150V
Collector cut-off current BDS18 VCE = –60V
(IB = 0)
BDS19 VCE = –75V
Emitter cut-off current
(IC = 0)
VEB = –5V
Collector - Emitter
BDS18
sustaining voltage (IB = 0) BDS19
IC = –100mA
Collector - Emitter
saturation voltage
IC = –1A IB = –0.1A
Min.
–120
–150
Typ.
VBE(on)*
Base - Emitter voltage
IC = –1A VCE = –2V
hFE*
DC Current gain
IC = –0.5A VCE = –2V
40
IC = –4A VCE = –2V
15
fT
Transition frequency
IC = –0.5A VCE = –10V 30
Max.
–20
–20
–0.1
–0.1
Unit
mA
mA
–10 mA
V
V
–0.5
V
–1.0 V
250
150
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tf
Fall Time
Test Conditions
IC = 2A VCC = –80V
IB1 = 0.2A
IC = 2A VCC = –80V
IB1 = –IB2 = 0.2A
Max.
0.5
1.5
0.3
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
RTHj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5°C/W
Max. 62.5°C/W
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