CXK77B3610GB 查看數據表（PDF） - Sony Semiconductor

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CXK77B3610GB

High Speed Bi-CMOS Synchronous Static RAM

Sony Semiconductor 

Mode Select Truth Table

Item

Register-Resister mode

Register-Flow Thru mode

Register-Latch mode

M1

M2

L

H

L

L

H

L

CXK77B3610GB

Electrical Characteristics

• DC and operating characteristics

Item

Symbol

Input leakage current

ILI

Output leakage current

ILO

Operating power supply

current

ICC

Standby current

ISB

Output high voltage

VOH

Output low voltage

VOL

∗ VCC = 3.3V, Ta = 25°C

(VCC = 3.3V ± 10%, GND = 0V, Ta = 0 to 70°C)

Test conditions

Min. Typ.∗ Max. Unit

VIN = GND to VCC

–1

—

1

µA

VO = GND to VCC

G = VIH

–10

—

10

µA

Cycle = min.

Duty = 100%

IOUT = 0mA

—

—

TBD mA

ZZ ≥ VIH

20

mA

IOH = –2.0mA

2.4

—

—

V

IOL = 2.0mA

—

—

0.4

V

• I/O capacitance

Item

Symbol

Test conditions

Input capacitance

CIN

VIN = 0V

Clock input capacitance

CCLK

VIN = 0V

Output capacitance

COUT

VOUT = 0V

Note) These parameters are sampled and are not 100% tested.

(Ta = 25°C, f = 1MHz)

Min. Max. Unit

—

5

pF

—

8

pF

—

8

pF

–5–

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