CY7C1311BV18-250BZC(2004) 查看數據表（PDF） - Cypress Semiconductor
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CY7C1311BV18-250BZC Datasheet PDF : 23 Pages
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PRELIMINARY
CY7C1311BV18
CY7C1911BV18
CY7C1313BV18
CY7C1315BV18
Maximum Ratings
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Latch-up Current..................................................... >200 mA
Operating Range
Ambient Temperature with Power Applied .... –10°C to +85°C
Supply Voltage on VDD Relative to GND........ –0.5V to +2.9V
DC Applied to Outputs in High-Z .........–0.5V to VDDQ + 0.3V
DC Input Voltage[14] ............................ –0.5V to VDDQ + 0.3V
Range
Com’l
Current into Outputs (LOW) .........................................20 mA
DC Electrical Characteristics Over the Operating Range[11]
Ambient
Temperature (TA)
0°C to +70°C
VDD[15]
1.8 ± 0.1V
VDDQ[15]
1.4V to VDD
Parameter
Description
Test Conditions
Min.
Typ.
Max.
VDD
VDDQ
VOH
VOL
VOH(LOW)
VOL(LOW)
VIH
VIL
IX
IOZ
VREF
IDD
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage[14]
Input LOW Voltage[14]
Input Load Current
Output Leakage Current
Input Reference Voltage[16]
VDD Operating Supply
1.7
1.4
Note 12
Note 13
IOH = −0.1 mA, Nominal Impedance
IOL = 0.1 mA, Nominal Impedance
VDDQ/2 – 0.12
VDDQ/2 – 0.12
VDDQ – 0.2
VSS
VREF + 0.1
–0.3
GND ≤ VI ≤ VDDQ
GND ≤ VI ≤ VDDQ, Output Disabled
Typical Value = 0.75V
−5
−5
0.68
VDD = Max., IOUT = 0 mA, 167 MHz
f = fMAX = 1/tCYC
200 MHz
1.8
1.5
0.75
1.9
VDD
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
0.2
VDDQ + 0.3
VREF – 0.1
5
5
0.95
TBD
TBD
250 MHz
TBD
ISB1
Automatic
Power-down
Current
Max. VDD, Both Ports 167 MHz
Deselected, VIN ≥ VIH or
VIN ≤ VIL
f = fMAX = 1/tCYC,
200 MHz
250 MHz
Inputs Static
TBD
TBD
TBD
Notes:
11. All Voltage referenced to Ground.
12. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
13.
14.
Output are
Overshoot:
iVmIHpe(AdCan) c<eVcDoDnQtro+ll0e.d8.5IVOL(P=u(lVseDDwQid/2th)/(lResQs/5th)afonrtvCaYlCu/e2s),oUf n1d7e5rΩsh<o=otR: VQIL<(=AC3)50>Ω−s1..5V
(Pulse
width
less
than
tCYC/2).
15. Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
16. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
Unit
V
V
V
V
V
V
V
V
µA
µA
V
mA
mA
mA
mA
mA
mA
Document Number: 38-05620 Rev. **
Page 11 of 23
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