CY7C1311BV18-200BZI(2011) 查看數據表（PDF） - Cypress Semiconductor
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CY7C1311BV18-200BZI Datasheet PDF : 32 Pages
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CY7C1311BV18, CY7C1911BV18
CY7C1313BV18, CY7C1315BV18
18-Mbit QDR™-II SRAM 4-Word
Burst Architecture
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
Features
Functional Description
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 300 MHz clock for high bandwidth
■ 4-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ Available in x8, x9, x18, and x36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
The CY7C1311BV18, CY7C1911BV18, CY7C1313BV18, and
CY7C1315BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR-II archi-
tecture has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common IO devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
addresses are latched on alternate rising edges of the input (K)
clock. Accesses to the QDR-II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are provided with DDR
interfaces. Each address location is associated with four 8-bit
words (CY7C1311BV18), 9-bit words (CY7C1911BV18), 18-bit
words (CY7C1313BV18), or 36-bit words (CY7C1315BV18) that
burst sequentially into or out of the device. Because data can be
transferred into and out of the device on every rising edge of both
input clocks (K and K and C and C), memory bandwidth is
maximized while simplifying system design by eliminating bus
“turn-arounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
CY7C1311BV18 – 2M x 8
CY7C1911BV18 – 2M x 9
CY7C1313BV18 – 1M x 18
CY7C1315BV18 – 512K x 36
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
300 MHz
300
x8
765
x9
800
x18
840
x36
985
278 MHz
278
720
730
760
910
250 MHz
250
665
675
705
830
200 MHz
200
560
570
590
675
167 MHz
167
495
490
505
570
Unit
MHz
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05620 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 02, 2011
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