CY7C1399B 查看數據表（PDF） - Cypress Semiconductor

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CY7C1399B

32K x 8 3.3V Static RAM

Cypress Semiconductor 

CY7C1399B

Electrical Characteristics Over the Operating Range (continued)

Parameter

VOH

VOL

VIH

Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Test Conditions

VCC = Min., IOH = –2.0 mA

VCC = Min., IOL = 4.0 mA

VIL

Input LOW Voltage

IIX

Input Load Current

IOZ

Output Leakage Current GND ≤ VI ≤ VCC,

Output Disabled

IOS

Output Short Circuit

Current[3]

VCC = Max., VOUT = GND

ICC

VCC Operating

Supply Current

VCC = Max., IOUT = 0 mA,

f = fMAX = 1/tRC

ISB1

Automatic CE Power-Down Max. VCC, CE ≥ VIH,

Current — TTL Inputs

VIN ≥ VIH, or VIN ≤ VIL,

f = fMAX

L

ISB2

Automatic CE Power-Down

Current — CMOS Inputs[4]

Max. VCC, CE ≥ VCC–0.3V, VIN ≥

VCC – 0.3V, or VIN ≤ 0.3V,

WE≥VCC–0.3V or WE≤ 0.3V,

L

f=fMAX

1399B-15

1399B-20

Min. Max. Min. Max. Unit

2.4

2.4

V

0.4

0.4

V

2.2

VCC

2.2

VCC

V

+0.3V

+0.3V

–0.3 0.8 –0.3 0.8

V

–1

+1

–1

+1

µA

–5

+5

–5

+5

µA

–300

–300 mA

50

45

mA

5

5

mA

4

4

mA

500

500 µA

50

50

µA

Capacitance[5]

Parameter

CIN: Addresses

CIN: Controls

COUT

Description

Test Conditions

Max.

Unit

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 3.3V

5

pF

6

pF

Output Capacitance

6

pF

AC Test Loads and Waveforms

3.3V

OUTPUT

R1 317Ω

CL

INCLUDING

JIG AND

SCOPE

R2

351Ω

Equivalent to: THÉVENIN EQUIVALENT

OUTPUT

167Ω

1.73V

3.0V

10%

GND

≤ 3 ns

Note:

5. Tested initially and after any design or process changes that may affect these parameters.

ALL INPUT PULSES

90%

90%

10%

≤ 3 ns

Document #: 38-05071 Rev. *C

Page 3 of 10

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