DS502ST12 查看數據表（PDF） - Dynex Semiconductor

零件编号

产品描述 (功能)

生产厂家

DS502ST12

Rectifier Diode

Dynex Semiconductor 

DS502ST

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; T = 175oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 175oC

VR = 0

Max. Units

6.5

kA

211 x 103 A2s

8.0

kA

320 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Clamping force 4.5kN

with mounting compound

Anode dc

Cathode dc

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

-

0.07 oC/W

-

0.14 oC/W

-

0.14 oC/W

-

0.02 oC/W

-

0.04 oC/W

-

185

oC

-

175

oC

–55 200

oC

3.5 5.0

kN

CHARACTERISTICS

Symbol

IRM

VTO

rT

Parameter

Peak reverse current

Threshold voltage

Slope resistance

Conditions

At V , T = 175oC

RRM case

At Tvj = 175˚C

At Tvj = 175˚C

Min. Max. Units

-

30 mA

-

0.84 V

- 0.667 mΩ

3/7

www.dynexsemi.com

Share Link: