T28F016SA-100 查看數據表（PDF） - Intel
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T28F016SA-100 Datasheet PDF : 55 Pages
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E
28F016SA
2.1 Lead Descriptions (Continued)
Symbol
Type
Name and Function
RY/BY#
OPEN DRAIN
OUTPUT
READY/BUSY: Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# high
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or block erase is suspended, or the
device is in deep power-down mode. This output is always active (i.e., not
floated to tri-state off when OE# or CE0#,CE1# are high), except if a
RY/BY# Pin Disable command is issued.
WP#
INPUT
WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or block erases. When WP# is high, all blocks
can be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE#
INPUT
BYTE ENABLE: BYTE# low places device in x8 mode. All data is then
input or output on DQ0–7, and DQ8–15 float. Address A0 selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A0 input buffer. Address A1 then becomes the lowest order
address.
3/5#
INPUT
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5.0V operation.
NOTES:
Reading the array with 3/5# high in a 5.0V system could damage the
device.
There is a significant delay from 3/5# switching to valid data.
VPP
SUPPLY
ERASE/PROGRAM POWER SUPPLY: For erasing memory array blocks
or writing words/bytes/pages into the flash array.
VCC
SUPPLY
DEVICE POWER SUPPLY (3.3V ± 10%, 5.0V ± 10%, 5.0V ± 5%):
Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NC
NO CONNECT:
Lead may be driven or left floating.
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