GT28F800F3F3B150 查看數據表（PDF） - Intel
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GT28F800F3F3B150 Datasheet PDF : 47 Pages
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E
FAST BOOT BLOCK DATASHEET
8.8 Extended Temperature Block Erase And Program Performance(3, 4, 5)
2.7 V VPP
12 V VPP
# Sym
Parameter
Notes Typ(1) Max Typ(1) Max Unit
W19 tWHRH1, Program Time
2
23.5
200
8
185 µs
tEHRH1 Block Program Time (Parameter)
2
0.10
0.30
0.03
0.10 sec
Block Program Time (Main)
2
0.8
2.4
0.24
0.8 sec
tWHRH2, Block Erase Time (Parameter)
2
1
4
0.8
4 sec
tEHRH2 Block Erase Time (Main)
2
1.8
5
1.1
5 sec
tWHRH5, Program Suspend Latency
tEHRH5
6
10
5
10 µs
tWHRH6, Erase Suspend Time
tEHRH6
13
20
10
12 µs
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Subject to change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled, but not 100% tested.
5. Reference the AC Waveform for Write Operations Figure 20.
8.9 Automotive Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those listed in
the extended temperature specifications. See Section 7.2 for extended temperature specifications.
Symbol
Parameter
Notes
Min
Max
Unit
TA
Operating Temperature
-40
+125
°C
VCC1
VCC Supply Voltage
1
3.0
3.6
V
VCCQ1 I/O Voltage
1,2
3.0
3.6
V
VPPH1 VPP Supply Voltage
1
3.0
3.6
V
VPPH2 VPP Supply Voltage
1,3
11.4
12.6
V
Cycling Parameter Block Erase Cycling
30,000
Cycles
Main Block Erase Cycling
1,000
Cycles
NOTES:
1. See DC Characteristics tables for voltage range-specific specifications.
2. The voltage swing on the inputs, VIN is required to match VCCQ.
3. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main and
parameter blocks. A hard connection to VPP = 11.4 V–12.6 V is not allowed and can cause damage to the device.
PRODUCT PREVIEW
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