VSC8101QB 查看數據表（PDF） - Vitesse Semiconductor

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VSC8101QB

155.52 Mb/s Clock and Data Recovery Units

Vitesse Semiconductor 

VITESSE

VSC8101/8102

Preliminary Data Sheet

155.52 Mb/s Clock and

Data Recovery Units

VSC8101/8102 DC Characteristics (Over recommended operating conditions)

Table 1: Inputs and Outputs

Parameter

Description

VIH

Input HIGH voltage

VIL

Input LOW voltage

VOH

Output HIGH voltage

VOL

Output LOW voltage

∆ VI

Input voltage swing for

REFCK+/- and SDAT+/-

VOCM

∆ VO

Output common mode

voltage for RDAT+/- and

RCLK+/-

Output voltage swing for

RDAT+/- and RCLK+/-

Min Typ Max Units

Conditions

VCC -

1150

—

VCC -

600

mV

Guaranteed HIGH signal for all

inputs

VTT

—

VCC-

1500

mV

Guaranteed LOW signal for all

inputs

VCC -

1020

—

VCC -

700

VIN = VIH (max) or VIL (min).

mV Outputs terminated identically into

VTT with 50 ohms.

VTT

—

VCC -

1620

VIN = VIH (max) or VIL (min).

mV Outputs terminated identically into

VTT with 50 ohms.

(1) For AC-Coupling: input swing

at the pin.

450

—

—

mV (2) For DC-Coupling: input swing

referenced to the common mode

voltage;

.5 +

VTT

—

.8 +

VTT

Differential Outputs terminated

identically into VTT with 50 ohms.

600

—

—

mV

Differential Outputs terminated

identically into VTT with 50 ohms.

Table 2: Power Dissipation

Parameter

Description

Min Typ Max Units

Conditions

PD

Power dissipation

(VSC8101)

—

—

400

mW Outputs open, VCC = 2.1V

PD

Power dissipation

(VSC8102)

—

—

3.0

W same as above

ICC

Supply current (VSC8101)

—

—

190

mA same as above

ICC

Supply current (VSC8102)

—

—

1430 mA same as above

G52087-0 Rev. 1.3

® VITESSE Semiconductor Corporation

Page 5

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