TGA4953EPU 查看數據表（PDF） - TriQuint Semiconductor
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TGA4953EPU Datasheet PDF : 13 Pages
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Advance Product Datasheet
TGA4953EPU
MAXIMUM RATINGS
SYMBOL
Vd1, Vd2T
PARAMETER 6/
POSITIVE SUPPLY VOLTAGE
Drain Voltage
VALUE
8V
POSITIVE SUPPLY CURRENT
Id1
Drain Current
Id2T
Drain Current
Pd
POWER DISSIPATION
NEGATIVE GATE
Vg1, Vg2 Voltage
Ig1, Ig2
Gate Current
CONTROL GATE
Vctrl1, Vctrl2 Voltage
Ictrl1, Ictrl2 Gate Current
RF INPUT
PIN
Sinusoidal Continuous Wave Power
VIN
10.7Gb/s PRBS Input Voltage Peak to Peak
TCH
OPERATING CHANNEL TEMPERATURE
TSTG
STORAGE TEMPERATURE
100 mA
300mA
4W
0 V to –3 V
5 mA
Vd/2 to –3 V
5 mA
23 dBm
4 Vpp
150 0C
-40 to 125 0C
NOTES
1/
2/
3/
4/ 5/
Notes:
1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
2/ When operated at this bias condition with a base plate temperature of 800C, the median life is reduced.
3/ Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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