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TGA4953-EPU 查看數據表(PDF) - TriQuint Semiconductor

零件编号
产品描述 (功能)
生产厂家
TGA4953-EPU
TriQuint
TriQuint Semiconductor TriQuint
TGA4953-EPU Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Advance Product Datasheet
TGA4953EPU
Parameter
RθJC Thermal Resistance
(channel to backside of
carrier)
THERMAL INFORMATION
Test Condition
Vd2T=4.7V,
Id2T=150mA +/-5%
Pdiss
(W)
.71
TBase
(°C)
80
TCH
RθJC
MTTF
(°C) (°C/W) (HRS)
98
26
>1E6
Notes:
1. Based on a detailed thermal model of the output stage where channel temperature is highest.
Assumes worst case power dissipation condition (where no RF is applied at the input (no
power is dissipated in the load).
2. Thermal transfer is conducted thru the bottom of the TGA4953EPU package into the motherboard.
Design the motherboard to assure adequate thermal transfer to the base plate.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
3

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