FLL21E040IK 查看數據表（PDF） - Eudyna Devices Inc
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FLL21E040IK Datasheet PDF : 6 Pages
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FLL21E040IK
High Voltage - High Power GaAs FET
Output Power vs. Frequency
@VDS=28V, IDS=500mA
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
2
2.05 2.1 2.15 2.2 2.25 2.3
Frequency [GHz]
Pin=20dBm
Pin=35dBm
Pin=25dBm
P1dB
Pin=30dBm
Output Power & Drain Efficiency vs. Input Power
@VDS=28V, IDS=500mA f=2.14GHz
48
110
46
100
44
90
42
80
40
70
38
60
36
50
34
40
32
30
30
20
28
10
26
0
10 12 14 1618 20 22 24 26 28 3032 34 36 38
Input Pow er[dBm ]
Pout
Drain Efficiency
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power
@VDS=28V IDS=500mA fo=2.1325, f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR & Drain Efficiency vs. Output Power
@VDS=28V IDS=500mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
-25
35.0
-30
30.0
-35
25.0
-40
20.0
-45
15.0
-50
10.0
-55
5.0
-60
0.0
20 22 24 26 28 30 32 34 36 38 40 42
Output Pow er [dBm ]
IM 3
IM 5
Drain Efficiency
-25
35.0
-30
30.0
-35
25.0
-40
20.0
-45
15.0
-50
10.0
-55
5.0
-60
0.0
20 22 24 26 28 30 32 34 36 38 40 42
Output Pow er [dBm ]
+/-5M Hz
+/-10M Hz
Drain Efficiency
2
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