FX901 查看數據表（PDF） - SANYO -> Panasonic

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FX901

DC-DC Converter Applications

SANYO -> Panasonic 

Ordering number:EN5387

FX901

PNP Epitaxial Planar Silicon Transistor

N-Channel MOS Silicon FET

Silicon Schottky Barrier Diode

DC-DC Converter Applications

Features

· Composite type with a PNP transistor and a 2.5V

drive N-channel MOSFET with a built-in low

forward-voltage Schottky barrier diode faciliteting

high-density mounting.

Electrical Connection

Package Dimensions

unit:mm

2133

[FX901]

1:Base

2:Emitter

3:Anode, Source

4:Gate

5, 6:Common

(Collector, Cathode, Drain)

SANYO:XP5

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Allowable Power Dissipation

Total Power Dissipation

Storage Temperature

[TR]

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Junction Temperature

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Channel Temperature

[SBD]

Average Rectified Current

· Marking:901

Symbol

P

P

PT

Tstg

Conditions

Tc=25˚C, 1 unit

Mounted on ceramic board (750mm2×0.8mm) 1 unit

Mounted on ceramic board (750mm2×0.8mm)

VCBO

VCEO

VEBO

IC

ICP

IB

Tj

VDSS

VGSS

ID

IDP

Tch

PW≤10µs, duty cycle≤1%

IO

Ratings

Unit

8W

1.5 W

2W

–55 to +150 ˚C

–15 V

–11 V

–7 V

–3 A

–5 A

–600 mA

150 ˚C

11 V

±10 V

2A

8A

150 ˚C

500 mA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5

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