HGT4E30N60B3DS(2001) 查看數據表（PDF） - Fairchild Semiconductor
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HGT4E30N60B3DS
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
HGT4E30N60B3DS Datasheet PDF : 8 Pages
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HGTG30N60B3D, HGT4E30N60B3DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N60B3D,
HGT4E30N60B3DS
600
60
30
25
220
±20
±30
60A at 600V
208
1.67
-55 to 150
260
4
10
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
BVCES
ICES
VCE(SAT)
IC = 250µA, VGE = 0V
VCE = BVCES
IC = IC110 ,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
600
-
-
V
-
-
250
µA
-
-
3
mA
-
1.45
1.9
V
-
1.7
2.1
V
Gate to Emitter Threshold Voltage
VGE(TH) IC = 250µA, VCE = VGE
4.2
5
6
V
Gate to Emitter Leakage Current
Switching SOA
IGES
VGE = ±20V
-
-
±250
nA
SSOA
TJ = 150oC, RG = 3Ω, VCE (PK) = 480V
200
-
-
A
VGE = 15V, L = 100µH VCE (PK) = 600V
60
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-
7.2
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
IC = IC110 ,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3Ω ,
L = 1mH,
Test Circuit (Figure 19)
-
170
190
nC
-
230
250
nC
-
36
-
ns
-
25
-
ns
-
137
-
ns
-
58
-
ns
-
550
800
µJ
-
680
900
µJ
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
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