HGTG30N60B3D(2001) 查看數據表（PDF） - Fairchild Semiconductor
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HGTG30N60B3D
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
HGTG30N60B3D Datasheet PDF : 8 Pages
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HGTG30N60B3D, HGT4E30N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
TJ = 150oC, RG = 3Ω, L = 1mH,
VCE = 480V
10
1 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
TC VGE
75oC 15V
75oC 10V
110oC 15V
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W, SEE NOTES
110oC 10V
0.1
5
10
20
40
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
500
VCE = 360V, RG = 3Ω, TJ = 125oC
18
450
16
400
ISC
14
350
12
300
10
250
tSC
8
200
6
150
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
225 DUTY CYCLE <0.5%, VGE = 10V
200 PULSE DURATION = 250µs
175
TC = -55oC
150
TC = 150oC
125
100
TC = 25oC
75
50
25
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
350
DUTY CYCLE <0.5%, VGE = 15V
300 PULSE DURATION = 250µs
250
TC = -55oC
200
150
TC = 150oC
100
TC = 25oC
50
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6
RG = 3Ω, L = 1mH, VCE = 480V
5
TJ = 25oC, TJ = 150oC, VGE = 10V
4
3
2
1
TJ = 25oC, TJ = 150oC, VGE = 15V
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
4.5
RG = 3Ω, L = 1mH, VCE = 480V
4.0
3.5
3.0
2.5 TJ = 150oC, VGE = 10V OR 15V
2.0
1.5
1.0
0.5
TJ = 25oC, VGE = 10V OR 15V
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
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