HGTG30N60B3D(2001) 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
HGTG30N60B3D
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
HGTG30N60B3D Datasheet PDF : 8 Pages
| |||
HGTG30N60B3D, HGT4E30N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
10
8
CIES
6
FREQUENCY = 1MHz
4
2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.50
0.20
10-1 0.10
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
t1
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
200
175
150
125
100
75
50
25
0
0
25oC
100oC
-55oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VEC, FORWARD VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50
TC = 25oC, dIEC/dt = 200A/µs
40
trr
30
ta
20
tb
10
0
1
2
5
10
20 30
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
Share Link: