GL05T-E3-18 查看數據表（PDF） - Vishay Semiconductors
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GL05T-E3-18
Vishay Semiconductors
GL05T-E3-18 Datasheet PDF : 6 Pages
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www.vishay.com
GL05T to GL24T
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GL05T
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Blocking voltage
Operating temperature
Storage temperature
8/20 μs
Pin 1-2 (pin 3 n.c.)
8/20 μs waveform
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
IB = 1 μA
Pin 2-1 or pin 2-3
Junction temperature
SYMBOL
IPPM
PPP
VESD
VB
TJ
TSTG
VALUE
25
300
±8
± 15
70
-55 to +150
-55 to +150
UNIT
A
W
kV
kV
V
°C
°C
ABSOLUTE MAXIMUM RATINGS GL12T
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Blocking voltage
Operating temperature
Storage temperature
8/20 μs
Pin 1-2 (pin 3 n.c.)
8/20 μs waveform
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
IB = 1 μA
Pin 2-1 or pin 2-3
Junction temperature
SYMBOL
IPPM
PPP
VESD
VB
TJ
TSTG
VALUE
12
300
±8
± 15
70
-55 to +150
-55 to +150
UNIT
A
W
kV
kV
V
°C
°C
ABSOLUTE MAXIMUM RATINGS GL15T
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Blocking voltage
Operating temperature
Storage temperature
8/20 μs
Pin 1-2 (pin 3 n.c.)
8/20 μs waveform
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
IB = 1 μA
Pin 2-1 or pin 2-3
Junction temperature
SYMBOL
IPPM
PPP
VESD
VB
TJ
TSTG
VALUE
10
300
±8
± 15
70
-55 to +150
-55 to +150
UNIT
A
W
kV
kV
V
°C
°C
ABSOLUTE MAXIMUM RATINGS GL24T
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Blocking voltage
Operating temperature
Storage temperature
8/20 μs
Pin 1-2 (pin 3 n.c.)
8/20 μs waveform
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
IB = 1 μA
Pin 2-1 or pin 2-3
Junction temperature
SYMBOL
IPPM
PPP
VESD
VB
TJ
TSTG
VALUE
5
300
±8
± 15
70
-55 to +150
-55 to +150
UNIT
A
W
kV
kV
V
°C
°C
The GLxxT contains an avalanche diode (pin 3-1) and a switching diode (pin 3-2). With pin 1 connected to the signal or data line
and pin 2 connected to ground both diodes are in series (pin 3 remains unconnected). The big and robust avalanche diode,
driven in reverse direction, provides the working range VRWM of 5 V, 12 V, 15 V or 24 V. Due to its size the capacitance of the
avalanche diode is in the range of typ. 260 pF (GL05T) and 65 pF (GL24T). The small switching diode in series has a low
capacitance of just 2.5 pF (typ.). As both diodes are in series (with pin 3 not connected) the total capacitance of both diodes
measured between pin 1 and 2 is as low as the capacitance of the switching diode.
Before the GLxxT can provide this low capacitance the big capacitance of the avalanche diode has to be charged up with the
first signal or data pulses. This is usually no problem for digital signals like USB or other data ports.
With the GLxxT a signal or data line can be protected against positive transients only. For negative transients another GLxxT
can be used to provide a back path for the negative transients as well.
Rev. 2.4, 24-Jan-2019
2
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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