GL05T-E3-18 查看數據表（PDF） - Vishay Semiconductors
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GL05T-E3-18
Vishay Semiconductors
GL05T-E3-18 Datasheet PDF : 6 Pages
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www.vishay.com
Data line
ground
1
3 n.c.
2
Uni
Unidirectional clamping
performance for positive
transients only.
Data line
n.c. 3
21
12
ground
3 n.c.
BiSy
Bidirectional and Symmetrical
clamping performance for positive
and negative transients.
GL05T to GL24T
Vishay Semiconductors
Data line
n.c.
1
2
ground
3 n.c.
BiAs
Bidirectional and Asymmetrical
clamping performance for positive
and negative transients.
ELECTRICAL CHARACTERISTICS GL05T (Tamb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
at VR = 5 V
at IR = 1 mA
at IPP = 1 A
at IPP = 5 A
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
CD
MIN.
-
-
5
-
6.9
-
-
-
TYP.
-
-
-
-
7.5
-
-
2.5
MAX.
1
5
-
20
8.0
9.8
11
5
UNIT
lines
V
V
μA
V
V
V
pF
ELECTRICAL CHARACTERISTICS GL12T (Tamb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
at VR = 12 V
at IR = 1 mA
at IPP = 1 A
at IPP = 5 A
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
CD
MIN.
-
-
12
-
13.3
-
-
-
TYP.
-
-
-
-
14.3
-
-
2.5
MAX.
1
12
-
1
17.2
19
24
5
UNIT
lines
V
V
μA
V
V
V
pF
ELECTRICAL CHARACTERISTICS GL15T (Tamb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
at VR = 15 V
at IR = 1 mA
at IPP = 1 A
at IPP = 5 A
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
CD
MIN.
-
-
15
-
16.7
-
-
-
TYP.
-
-
-
-
17.7
-
-
2.5
MAX.
1
15
-
1
22
24
33
5
UNIT
lines
V
V
μA
V
V
V
pF
Rev. 2.4, 24-Jan-2019
3
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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