GL05T-E3-18 查看數據表（PDF） - Vishay Semiconductors
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GL05T-E3-18
Vishay Semiconductors
GL05T-E3-18 Datasheet PDF : 6 Pages
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www.vishay.com
GL05T to GL24T
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GL24T (Tamb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
at VR = 24 V
at IR = 1 mA
at IPP = 1 A
at IPP = 5 A
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
CD
MIN.
-
-
24
-
26.7
-
-
-
TYP.
-
-
-
-
28.2
-
-
2.5
MAX.
1
24
-
1
33
43
55
5
UNIT
lines
V
V
μA
V
V
V
pF
100
Pin 3 - 2
10
1
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
VF in V
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
100
10
1
0.1
0.01
Pin 3 - 1
0.001
0.5
0.6
0.7
0.8
0.9
VF in V
Fig. 2 - Typical Forward Current IF vs. Forward Voltage VF
35
GL24T
30
25
Pin 1 - 3
TJ = 25 °C
20 GL15T
15
GL12T
10
GL05T
5
0
0.01 0.1 1
10 100 1000 10 000 100 000
IR in µA
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 2.4, 24-Jan-2019
4
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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