GLT41316-20T 查看數據表（PDF） - G-Link Technology

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GLT41316-20T

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G-Link Technology  

G-LINK

GLT41316

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

June 1998 (Rev 2)

Absolute Maximum Ratings*

Capacitance*

TA=25°C, VCC=5V±10%, VSS=0V

Operating Temperature, TA (ambient)

Symbol

Parameter

.......................................-0°C to +70°C

Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input

Voltage Relative to VSS...............-1.0V to + 7.0V

Short Circuit Output Current......................50mA

Power Dissipation......................................1.0W

CIN2

COUT

RAS , CAS , UW , LW , OE

Data Input/Output

Max. Unit

5 pF

7 pF

7 pF

*Note: Operation above Absolute Maximum Ratings *Note: Capacitance is sampled and not 100% tested

can adversely affect device reliability.

Electrical Specifications

l WE means UW and LW .

l All voltages are referenced to GND.

l After power up, wait more than 100µs and then, execute eight CAS -before- RAS or RAS -only

refresh cycles as dummy cycles to initialize internal circuit.

Block Diagram :

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-3-

G-Link Technology Corporation, Taiwan

2F, No.12, R&D Rd. II, Science-Based Industrial Park,

Hsin Chu, Taiwan, R.O.C.

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