GLT44108-70TS 查看數據表（PDF） - G-Link Technology

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GLT44108-70TS

512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G-Link Technology  

G-LINK

GLT44108

512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE

Preliminary Aug 1999 (Rev.2.1)

Absolute Maximum Ratings*

Capacitance*

TA=25°C, VCC=5V±10%, VSS=0V

Operating Temperature, TA (ambient)

Symbol

......................................-10°C to +80°C

Parameter

Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input

Voltage Relative to VSS...............-1.0V to + 7.0V

Short Circuit Output Current......................50mA

Power Dissipation......................................1.0W

CIN2

COUT

RAS , CAS , WE , OE

Data Input/Output

Max. Unit

5 pF

7 pF

7 pF

*Note:Operation above Absolute Maximum Ratings can *Note: Capacitance is sampled and not 100% tested

adversely affect device reliability.

Electrical Specifications

l All voltages are referenced to GND.

l After power up, wait more than 200µs and then, execute eight CAS before RAS or RAS only

refresh cycles as dummy cycles to initialize internal circuit.

G-Link Technology

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

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G-Link Technology Corporation,Taiwan

6F, No.24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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