GLT44108-20PL 查看數據表（PDF） - G-Link Technology
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GLT44108-20PL Datasheet PDF : 16 Pages
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G-LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
DC and Operating Characteristics (1-2)
TA = 0°C to 70°C, VCC=5V±10%, VSS=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access Min. Typ Max. Unit Notes
Time
ILI Input Leakage Current
(any input pin)
0V ≤ VIN ≤ 5.5V
(All other pins not under
test=0V)
-10
+10 µA
ILO Output Leakage Current 0V ≤ Vout ≤ 5.5V
(for High-Z State)
Output is disabled (Hiz)
-10
+10 µA
ICC1 Operating Current,
Random READ/WRITE
tRC = tRC (min.)
ICC2 Standby Current,(TTL)
RAS , CAS , at VIH
other inputs ≥ VSS
ICC3 Refresh Current,
RAS cycling,
RAS -Only
CAS at VIH
tRC = tRC (min.)
ICC4 Operating Current,
FAST Page Mode
RAS at VIL,
CAS ,address
cycling:tPC=tPC(min.)
ICC5 Refresh Current,
RAS , CAS ,
CAS Before RAS
address cycling:
tRC=tRC(min.)
ICC6 Standby Current, (CMOS) RAS ≥ VCC-0.2V,
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
CAS ≥ VCC-0.2V,
All other inputs ≥VSS
IOL = 4.2mA
IOH = -5mA
tRAC = 40ns
tRAC = 50ns
tRAC = 60ns
tRAC = 40ns
tRAC = 50ns
tRAC = 60ns
tRAC = 40ns
tRAC = 50ns
tRAC = 60ns
tRAC = 40ns
tRAC = 50ns
tRAC = 60ns
-1
2.4
2.4
150
140 mA 1,2
120
2 mA
150
140 mA 2
120
150
140 mA 1,2
120
150 mA 1
140
120
1 mA
+0.8 V 3
VCC+1 V
3
0.4 V
V
Notes:
1.ICC is dependent on output loading when the device output is selected. Specified ICC(max.) is measured with the output
open.
2.ICC is dependent upon the number of address transitions specified. ICC(max.) is measured with a maximum of one transition
per address cycle in random Read/Write and Fast Page Mode.
3. Specified VIL(min.) is steady state operation. During transitions, VIL(min.) may undershoot to -1.0V for a period
not to exceed 20ns.All AC parameters are measured with VIL(min.)≥Vss and VIH(max.)≤Vcc.
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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