GS815018AB 查看數據表（PDF） - Giga Semiconductor
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GS815018AB Datasheet PDF : 25 Pages
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GS815018/36AB-357/333/300/250
Register-Register Late Write, Pipelined Read Truth Table
DQ
CK ZZ SS SW Bx G
Current Operation
(tn)
DQ
(tn+1)
X
1
X
X
X
X
Sleep (Power Down) mode
Hi-Z
Hi-Z
↑
0
1
X
X
X
Deselect
***
Hi-Z
↑
0
0
1
X
1
Read
Hi-Z/
Hi-Z
↑
0
0
1
X
0
Read
***
Q(tn)
↑
0
0
0
0
X
Write All Bytes
***
D(tn)
↑
0
0
0
X
X
Write Bytes with Bx = 0
***
D(tn)
↑
0
0
0
1
X
Write (Abort)
***
Hi-Z
Notes:
1. If one or more Bx = 0, then B = “T” else B = “F”.
2. “1” = input “high”; “0” = input “low”; “X” = input “don’t care”.
3. “***” indicates that the DQ input requirement/output state and CQ output state are determined by the previous operation.
4. DQs are tristated in response to Bank Deselect, Deselect, and Write commands, one full cycle after the command is sampled.
5. CQs are tristated in response to Bank Deselect commands only, one full cycle after the command is sampled.
6. Up to three (3) Continue operations may be initiated after a Read or Write operation is initiated to burst transfer up to four (4) distinct pieces
of data per single external address input. If a fourth (4th) Continue operation is initiated, the internal address wraps back to the initial exter-
nal (base) address.
Rev: 1.05 10/2005
6/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
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