H7N0307AB 查看數據表（PDF） - Renesas Electronics
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H7N0307AB Datasheet PDF : 7 Pages
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H7N0307AB
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
4
10 V
2 A, 5 A, 10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
20
ID = 60 A
VGS
40
16
30
VDS
20
VDD = 25 V
10 V 12
5V
8
10
VDD = 25 V
4
10 V
5V
0
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
30
10
75°C
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
tr
100
td(off)
50
td(on)
20
tf
10
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 6
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