Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
HAT2031T 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
HAT2031T
Silicon N Channel Power MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
HAT2031T Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
HAT2031T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.2
Pulse Test
0.16
0.12
0.08
I
D
=2A
1A
0.04
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
2.5 V
0.05
V
GS
= 4 V
0.02
0.01
0.005
0.002
0.2
0.5 1 2
5 10 20
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.2
0.16
0.12
V
GS
= 2.5 V
0.08
I
D
= 2, 1, 0.5 A
0.04
0
–40
2, 1, 0.5 A
4V
Pulse Test
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
5
75 °C
25 °C
2
1
0.5
0.2
V
DS
= 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I
D
(A)
4
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]