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HAT2031T(D) 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
HAT2031T(D)
Silicon N Channel Power MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
HAT2031T(D) Datasheet PDF : 10 Pages
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Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1
di/dt = 20 A/
µ
s
V
GS
= 0, Ta = 25
°
C
0.2 0.5 1 2
5 10
Reverse Drain Current I
DR
(A)
HAT2031T
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
1000
300
Ciss
100
Coss
30
Crss
10
0 10 20 30 40 50
Drain to Source Voltage V
DDSS
(V)
Dynamic Input Characteristics
50
10
I
D
= 3.5 A
40
V
DD
= 5 V
10 V
30
20 V
20
V
DS
8
6
V
GS
4
10
V
DD
= 20 V 2
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
1000
500
Switching Characteristics
V
GS
= 4 V, V
DD
= 10 V
PW = 5
µ
s, duty < 1 %
200
100
t f
50
tr
t
d(off)
20
t
d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
5
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