GS78116B-10 查看數據表（PDF） - Giga Semiconductor

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GS78116B-10

512K x 16 8Mb Asynchronous SRAM

Giga Semiconductor 

BGA

Commercial Temp

Industrial Temp

512K x 16

8Mb Asynchronous SRAM

Features

• Fast access time: 10, 12, 15 ns

• CMOS low power operation: 300/250/220/180 mA at

minimum cycle time

• Single 3.3 V ± 0.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array

package

Description

The GS78116 is a high speed CMOS static RAM organized as

524,288-words by 16-bits. Static design eliminates the need for

external clocks or timing strobes. The GS78116 operates on a

single 3.3 V power supply and all inputs and outputs are TTL-

compatible. The GS78116 is available in 14 mm x 22 mm

BGA package.

Pin Descriptions

Symbol

A0 to A18

DQ1 to DQ16

CE

WE

OE

VDD

VSS

NC

GS78116B

10, 12, 15 ns

3.3 V VDD

Description

Address input

Data input/output

Chip enable input

Write enable input

Output enable input

+3.3 V power supply

Ground

No connect

Block Diagram

A0

Row

Decoder

Address

Input

Buffer

A18

CE

WE

OE

Control

Memory Array

Column

Decoder

I/O Buffer

DQ1

DQ16

Rev: 1.02 9/2001

1/11

For latest documentation see http://www.gsitechnology.com.

© 1999, Giga Semiconductor, Inc.

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