GS78116B-10 查看數據表（PDF） - Giga Semiconductor
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GS78116B-10 Datasheet PDF : 11 Pages
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Capacitance
Parameter
Symbol
Test
Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
10
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
Output Leakage
Current
IOL
Output High Voltage
VOH
Output Low Voltage
VOL
VIN = 0 to VDD
Output High Z,
VOUT = 0 to VDD
IOH = –4 mA
IOL = +4 mA
–2 uA
–1 uA
2.4
2 uA
1 uA
0.4 V
GS78116B
Power Supply Currents
Parameter Symbol Test Conditions
Operating
Supply
Current
Standby
Current
Standby
Current
E ≤ VIL
All other inputs
IDD
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
E ≥ VIH
ISB1
All other inputs
≥ VIH or ≤VIL
Min. cycle time
E ≥ VDD – 0.2V
ISB2
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
0 to 70°C
10 ns 12 ns 15 ns
–40 to 85°C
10 ns 12 ns 15 ns
225 mA 220 mA 180 mA 270 mA 240 mA 200 mA
130 mA 120 mA 110 mA 150 mA 140 mA 130 mA
60 mA
80 mA
Rev: 1.02 9/2001
4/11
For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
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