GS78116B-10 查看數據表（PDF） - Giga Semiconductor
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GS78116B-10 Datasheet PDF : 11 Pages
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GS78116B
Write Cycle
Parameter
-10
-12
-15
Symbol
Unit
Min Max Min Max Min Max
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
Write to output in High Z
tWC
10 — 12 — 15 — ns
tAW
7
—
8
— 10 — ns
tCW
7
—
8
— 10 — ns
tDW
5
—
6
—
7
— ns
tDH
0
—
0
—
0
— ns
tWP
7
—
8
— 10 — ns
tAS
0
—
0
—
0
— ns
tWR
0
—
0
—
0
— ns
tWR1
0
—
0
—
0
—
ns
tWLZ*
3
—
3
—
3
— ns
tWHZ*
—
4
—
5
—
6
ns
* These parameters are sampled and are not 100% tested.
Write Cycle 1: WE Controlled
Address
OE
CE
WE
Data In
Data Out
tWC
tAW
tWR
tCW
tAS
tWP
tWHZ
tDW
tDH
Data valid
tWLZ
High impedance
Rev: 1.02 9/2001
7/11
For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
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