HDD16M64B8-13A 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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HDD16M64B8-13A

DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8, 4Banks, 4K Ref. SO-DIMM

Hanbit Electronics Co.,Ltd 

HANBit

HDD16M64B8

DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks,

4K Ref. SO-DIMM

Part No. HDD16M64B8

GENERAL DESCRIPTION

The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.

The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K

EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed

circuit board in parallel for each DDR SDRAM. The HDD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory

Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device

to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be

powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.

FEATURES

• Part Identification

HDD16M64B8 – 10A : 100MHz (CL=2)

HDD16M64B8 – 13A : 133MHz (CL=2)

HDD16M64B8 – 13B : 133MHz (CL=2.5)

• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRSM

• 2.5V ± 0.2V VDD and VDDQ power supply

• Auto & self refresh capability (4096 Cycles/64ms)

• All input and output are compatible with SSTL_2 interface

• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock

• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock

• MRS cycle with address key programs

- Latency (Access from column address) : 2, 2.5

- Burst length : 2, 4, 8

- Data scramble : Sequential & Interleave

• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock

• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock

• The used device is 4M x 8bit x 4Banks DDR SDRAM

URL : www.hbe.co.kr

REV 1.0 (August. 2002)

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HANBit Electronics Co.,Ltd.

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