HDD16M64B8-13A 查看數據表（PDF） - Hanbit Electronics Co.,Ltd
零件编号
产品描述 (功能)
生产厂家
HDD16M64B8-13A
Hanbit Electronics Co.,Ltd
HDD16M64B8-13A Datasheet PDF : 11 Pages
| |||
HANBit
HDD16M64B8
4. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this
parameter, but system performance (bus turnaround) will degrade accordingly.
SIMPLIFIED TRUTH TABLE
COMMAND
CK CK
/R
E E /CS A
n-1 n
S
/C
A /WE DM
S
BA
0,1
Register Extended MRS
HXLLLL X
Register Mode register set
HXLLLL X
Refresh
Auto refresh
Entry
Self
refresh Exit
H
H
LLLHX
L
LHHH
LH
X
HX X X
Bank active & row addr.
H X L LHH X
V
Read & Auto
precharge
column disable
H XLHLH X
V
address Auto precharge eable
Auto
precharge
Write &
H
disable
column
H XLHL
X
V
Auto
precharge
address
L
enable
Burst Stop
H X LHH L X
Precharg Bank selection
e
All banks
V
H XLLHL X
X
Clock suspend or Entry
active power down
Exit
HX X X
HL
X
LVVV
L HXXXX X
Precharge power
down mode
Entry
Exit
DM
No operation command
HX X X
HL
X
LHHH
HX X X
LH
X
LVVV
H
X
V
HX X
HX
LH H
X
X
H
A10/
AP
A11
A9~A0
OP code
OP code
X
X
Row address
Column
L
Address
H
(A0 ~A9)
NOTE
1,2
1,2
3
3
3
3
4
4
L
Column
4
Address
H
(A0 ~ A9) 4,6
X
7
L
X
H
5
X
X
X
8
X
(V=Valid, X=Don't care, H=Logic high, L=Logic low)
Notes :
1. OP Code : Operand code
A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
URL : www.hbe.co.kr
9
REV 1.0 (August. 2002)
HANBit Electronics Co.,Ltd.
Share Link: