HFA3134 查看數據表（PDF） - Intersil
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HFA3134 Datasheet PDF : 5 Pages
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HFA3134, HFA3135
Electrical Specifications TA = 25°C (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
NF
f = 900MHz, IC = -10mA,
B
-
5.2
-
dB
-1V ≤ VCE ≤ -5V, ZS = 50Ω
f = 900MHz, IC = -1mA,
B
-
4.6
-
dB
-1V ≤ VCE ≤ -5V, ZS = 50Ω
Current Gain-Bandwidth Product
fT
IC = -10mA, VCE = -5V
B
-
7
-
GHz
Power Gain-Bandwidth Product
fMAX
IC = -10mA, VCE = -5V
B
-
TBD
-
GHz
Base to Emitter Capacitance
VBE = 0.5V
B
-
550
-
fF
Collector to Base Capacitance
VCB = -3V
B
-
400
-
fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring VEBO can degrade the transistor hFE and hFE match.
5. See Typical Performance Curves for more information.
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
20
18
16
14
12
10
8
Q1
6
Q2
4
Q1
Q2
2
Q1
Q2
Q1
Q2
IB = 200µA
IB = 160µA
IB = 120µA
IB = 80µA
Q1 IB = 40µA
Q2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
100m
10m
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
0.4
Q1
Q2
Q1
Q2
IC
IB
0.5
0.6
0.7
0.8
0.9
1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
BASE TO EMITTER VOLTAGE
4
FN4445.2
August 12, 2005
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