HM64YLB36514 查看數據表（PDF） - Renesas Electronics

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HM64YLB36514

16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)

Renesas Electronics 

HM64YLB36514 Series

Absolute Maximum Ratings

Parameter

Symbol Rating

Unit Notes

Input voltage on any pin

Core supply voltage

Output supply voltage

Operating temperature

Storage temperature

Output short-circuit current

Latch up current

Package junction to top thermal resistance

V

IN

VDD

VDDQ

TOPR

TSTG

IOUT

ILI

θJ-top

−0.5

to

V

DDQ

+

0.5

−0.5 to +3.13

−0.5 to +2.1

0 to +85

−55 to +125

25

200

6.5

V

1, 4

V

1

V

1, 4

°C

°C

mA

mA

°C/W 5

Package junction to board thermal resistance

θJ-board 12

°C/W 5

Notes: 1. All voltage is referenced to V .

SS

2. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional

operation should be restricted the operation conditions. Exposure to higher voltages than

recommended voltages for extended periods of time could affect device reliability.

3. These CMOS memory circuits have been designed to meet the DC and AC specifications

shown in the tables after thermal equilibrium has been established.

4. The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN.

Remember, according to the absolute maximum ratings table, VDDQ is not to exceed 2.1 V,

whatever the instantaneous value of V .

DDQ

5. See figure below.

θJ-top

Thermocouple

Thermo grease

θJ-board

Teflon block

Thermocouple

Water

Cold plate

SRAM

Teflon block

Water

SRAM

JEDEC/2S2P BGA

Thermal board

Water

Thermo grease

Cold plate

Water

JEDEC/2S2P BGA

Thermal board

Rev.0.10, May.15.2003, page 7 of 22

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