HUFA76423S3S 查看數據表（PDF） - Fairchild Semiconductor
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HUFA76423S3S
Fairchild Semiconductor
HUFA76423S3S Datasheet PDF : 10 Pages
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HUFA76423P3, HUFA76423S3S
Typical Performance Curves (Continued)
300
100
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ
TC
=
=
MAX RATED
25oC
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
100
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
45
30
TJ = 175oC
15
TJ = 25oC
TJ = -55oC
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
60
VGS = 10V
VGS = 5V
45
30
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 4V
VGS = 3.5V
VGS = 3V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
50
ID = 35A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
40
ID = 15A
30
ID = 25A
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
VGS = 10V, ID = 35A
20
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.5
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76423P3, HUFA76423S3S Rev. B
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