HUFA76445S3ST 查看數據表（PDF） - Fairchild Semiconductor
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HUFA76445S3ST
Fairchild Semiconductor
HUFA76445S3ST Datasheet PDF : 10 Pages
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HUFA76445P3, HUFA76445S3S
Typical Performance Curves (Continued)
1000
100µs
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
120
90
60
30
0
1.5
TJ = 175oC
TJ = 25oC
TJ = -55oC
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
150
VGS = 10V
VGS = 5V
120
VGS = 4V
90
VGS = 3.5V
60
VGS = 3V
30
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
25
ID = 75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
20
ID = 35A
15
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
VGS = 10V, ID = 75A
10
ID = 20A
5
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.0
0.5
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76445P3, HUFA76445S3S Rev. A
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