IDT54FCT810CTEB 查看數據表（PDF） - Integrated Device Technology

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IDT54FCT810CTEB

FAST CMOS BUFFER/CLOCK DRIVER

Integrated Device Technology 

IDT54/74FCT810BT/CT

FAST CMOS BUFFER/CLOCK DRIVER

MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN DESCRIPTION

Pin Names

OEA, OEB

Description

3-State Output Enable Inputs (Active LOW)

INA, INB

OAn, OBn

Clock Inputs

Clock Outputs

3103 tbl 01

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol Parameter(1) Conditions Typ. Max. Unit

CIN

Input

Capacitance

VIN = 0V

4.5 6.0 pF

COUT Output

VOUT = 0V 5.5 8.0 pF

Capacitance

NOTE:

3103 lnk 02

1. This parameter is measured at characterization but not tested.

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Rating

Commercial Military Unit

VTERM(2) Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

with Respect to

GND

VTERM(3) Terminal Voltage –0.5 to VCC –0.5 to VCC V

with Respect to

+0.5

+0.5

GND

TA

Operating

0 to +70 –55 to +125 °C

Temperature

TBIAS Temperature

–55 to +125 –65 to +135 °C

Under Bias

TSTG Storage

–55 to +125 –65 to +150 °C

Temperature

IOUT

DC Output

–60 to +120 –60 to +120 mA

Current

NOTES:

3103 lnk 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-

INGS may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability. No terminal voltage may exceed

VCC by +0.5V unless otherwise noted.

2. Input and VCC terminals.

3. Output and I/O terminals.

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified

Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%

Symbol

VIH

Parameter

Input HIGH Level

Test Conditions(1)

Guaranteed Logic HIGH Level

Min. Typ.(2) Max. Unit

2.0

—

—

V

VIL

Input LOW Level

II H

Input HIGH Current(5)

II L

Input LOW Current(5)

Guaranteed Logic LOW Level

VCC = Max.

VI = 2.7V

VCC = Max.

VI = 0.5V

—

— 0.8

V

—

—

±1 µA

—

—

±1 µA

IOZH

IOZL

II

High Impedance Output Current

(3-State Output pins)(5)

Input HIGH Current(5)

VCC = Max.

VO = 2.7V

VO = 0.5V

VCC = Max., VI = VCC (Max.)

—

—

±1 µA

—

—

±1 µA

—

—

±1 µA

VIK

Clamp Diode Voltage

IOS

Short Circuit Current

VCC = Min., IIN= –18mA

VCC = Max.(3), VO = GND

— –0.7 –1.2 V

–60 –120 –225 mA

VOH

Output HIGH Voltage

VCC = Min.

IOH = –12mA MIL.

2.4 3.3 —

V

VIN = VIH or VIL

IOH = –15mA COM'L.

IOH = –24mA MIL.

2.0 3.0 —

IOH = –32mA COM'L.(4)

VOL

Output LOW Voltage

VCC = Min.

IOL = 32mA MIL.

— 0.3 0.55 V

VIN = VIH or VIL

IOL = 48mA COM'L.

IOFF

Input/Output Power Off Leakage(5) VCC = 0V, VIN or VO ≤ 4.5V

—

—

±1 µA

VH

Input Hysteresis for all inputs

—

— 150 — mV

ICCL

ICCH

ICCZ

Quiescent Power Supply Current VCC = Max., VIN = GND or VCC

—

5 500

NOTES:

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at Vcc = 5.0V, +25°C ambient.

3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.

4. Duration of the condition can not exceed one second.

5. The test limit for this parameter is ± 5µA at TA = –55°C.

µA

3103 lnk 04

9.4

2

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